SICC Co.,Ltd.

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2024-04-12 山东凯发一触即发先进科技股份有限公司2023年度审计报告及财务报表定期公告
2024-04-12 山东凯发一触即发先进科技股份有限公司2023年年度报告定期公告
2024-04-12 2023年度独立董事述职报告-李相民定期公告
2024-04-12 2023年度独立董事述职报告-赵显定期公告
2024-04-12 2023年度审计委员会履职情况报告定期公告
2024-04-12 立信会计师事务所（特殊普通合伙）关于山东凯发一触即发先进科技股份有限公司非经营性资金占用及其他关联资金往来情况的专项报告定期公告
2024-04-12 2023年度内部控制评价报告定期公告
2024-04-12 2023年度独立董事述职报告-韩力定期公告
2024-04-12 山东凯发一触即发先进科技股份有限公司审计委员会对会计师事务所履行监督职责情况报告定期公告
2024-04-12 立信会计师事务所（特殊普通合伙）关于山东凯发一触即发先进科技股份有限公司2023年度营业收入扣除情况表的鉴证报告定期公告

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SICC Co.,Ltd.<\/title><meta name='keywords' content='SICC Co.,Ltd.'><meta name='description' content='SICC Co.,Ltd.'><meta name=\"author\" content=\"\u4e50\u9500\u6613CMS \u7cfb\u7edf\" \/>","pre_head_js":"","after_head_js":" <script>\r\n (function(){\r\n var bp = document.createElement('script');\r\n var curProtocol = window.location.protocol.split(':')[0];\r\n if (curProtocol === 'https') {\r\n bp.src = 'https:\/\/zz.bd.com\/linksubmit\/push.js';\r\n }\r\n else {\r\n bp.src = 'http:\/\/push.zhanzhang.baidu.com\/push.js';\r\n }\r\n var s = document.getElementsByTagName(\"script\")[0];\r\n s.parentNode.insertBefore(bp, s);\r\n })();\r\n <\/script>","menu":[{"id":0,"name":"\u9996\u9875","path":"","p_id":0,"title":"SICC Co.,Ltd.","href":"\/en\/","content":"","status":"open","current":false},{"id":51,"name":"About SICC","lan":"en","en_name":"about","path":"","p_id":0,"type":"article","flag":"article","status":"open","list_template":"about","detail_template":"about","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/v3bHtx6Hbcd2AkAGmUxbK3g9LknBk7zZrTDkWhEy.jpeg","summary":"About us","detail_content":"","sort":0,"listsize":11,"created_at":"1641639555","updated_at":"1641652596","background_image":"\/upload\/image\/lviNyPW1twAt5a1kUEqPE3ft8npVCm1BrgBoiajW.png","href":"\/en\/about.html","title":"About SICC","current":false,"child":[{"id":58,"name":"About us","lan":"en","en_name":"about1","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"about1","detail_template":"about1","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/dd9xFIkjSnsZrxYTOwHbq1IRFpkwTVnzF7J6VlDv.jpeg","summary":"About SICC","detail_content":"<p class=\"MsoNormal\">\r\n\t<br \/>\r\n<\/p>\r\n<p style=\"text-align:justify;background:white;\">\r\n\t<p style=\"text-align:justify;background:white;\">\r\n\t\t<span style=\"font-size:18.0pt;font-family:"color:#474342;background:white;\">SICC was founded in 2010. It is a technological\r\ncompany focusing on the R&D, production and sales of silicon carbide (SiC)\r\nsubstrate material. <\/span>\r\n\t<\/p>\r\n\t<p style=\"text-align:justify;background:white;\">\r\n\t\t<span style=\"font-size:18.0pt;font-family:"color:#474342;background:white;\">With the business philosophy of Technology \u00b7\r\nQuality \u00b7 Sustainability, SICC attaches importance to product and service\r\nquality, takes meeting customer needs and helping customers solve problems as\r\nits work orientation. SICC actively expands the market and pursues sustainable\r\nbusiness development while mastering the process technology independently.<\/span>\r\n\t<\/p>\r\n\t<p style=\"text-align:justify;background:white;\">\r\n\t\t<span style=\"font-size:18.0pt;font-family:"color:#474342;background:white;\">The SiC Single Crystal Substrate is a wide\r\nbandgap semiconductor material. Compared with traditional materials, it has\r\nbetter physical properties and can effectively improve the power density and\r\noverall performance of devices. It can be widely used in fields of power\r\nelectronics and microwave electronics. <\/span>\r\n\t<\/p>\r\n\t<p style=\"text-align:justify;background:white;\">\r\n\t\t<span style=\"font-size:18.0pt;font-family:"color:#474342;background:white;\">But what behind the superior physical\r\nproperties are sophisticated and complex preparation processes. The SiC signal\r\ncrystal grows in an enclosed environment with high temperature and low pressure.\r\nAny slight change in the environment may cause lattice disorder, which will\r\naffect the crystal quality.<\/span>\r\n\t<\/p>\r\n\t<p class=\"MsoNormal\">\r\n\t\t<span style=\"font-size:18.0pt;font-family:"color:#474342;background:white;\">Relying on the experience of industrialization and\r\nthe R&D team, SICC keeps paying attention to technology leading and quality\r\nimproving, and insists on continuous innovation. SICC will build integrated\r\nsolutions to improve service and product, and strives to become an\r\ninternational famous company of semiconductor materials.<\/span>\r\n\t<\/p>\r\n<\/p>","sort":0,"listsize":10,"created_at":"1641639555","updated_at":"1666315912","background_image":"\/upload\/image\/ypBfYFwoICVc7205uf5b86LXlUlJSUiJPynpyH9I.jpeg","href":"\/en\/about1.html","title":"About us","current":false},{"id":59,"name":"Enterprise Mission","lan":"en","en_name":"qysm","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"qysm","detail_template":"qysm","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/uJfqAsuITfp7qERwEIhErDIAlcJNAN7WFeHCLlC9.jpeg","summary":"Enterprise Mission","detail_content":"<h2 class=\"qysm\">\r\n\tOur mission\r\n<\/h2>\r\n<p class=\"qysmwz\">\r\n\tTo achieve greater profits for shareholders<br \/>\r\nTo provide better products and services for customers<br \/>\r\nTo offer better development platform and benefits for employees<br \/>\r\nTo create greater value and wealth for the society\r\n<\/p>","sort":1,"listsize":12,"created_at":"1641639555","updated_at":"1642411952","background_image":"\/upload\/image\/viEdey6Vd6ICLLZspEUTSPGVw6jvYWWG9m0mkTt3.jpeg","href":"\/en\/qysm.html","title":"Enterprise Mission","current":false},{"id":60,"name":"Philosophy and Vision","lan":"en","en_name":"lnyj","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"lnyj","detail_template":"lnyj","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/ceqxRN3wEAvxQ3czlIkNpZ9jJ20bHmFFLfUPGgel.jpeg","summary":"Philosophy and Vision","detail_content":"","sort":2,"listsize":10,"created_at":"1641639555","updated_at":"1641652116","background_image":"\/upload\/image\/7DknN4HXePF341SoVutC8acgh5hnNgFAqJrnb3ct.jpeg","href":"\/en\/lnyj.html","title":"Philosophy and Vision","current":false},{"id":61,"name":"Brand and Culture","lan":"en","en_name":"ppwh","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"ppwh","detail_template":"ppwh","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/wBFbVFoPubOo3O1UAgfQ4JVZqFfIchdGUHYVo210.jpeg","summary":"Brand and Culture","detail_content":"The SICC LOGO consists of <b>SiC<\/b> and <b>C<\/b>. <br \/>\r\n<b>SiC<\/b> represents silicon carbide substrate, and C is short for \"company\".<br \/>\r\nThe three-dimensional corner cut design of the letters highlights crystal element and three-dimensional sense, <br \/>\r\nrepresenting the company's pursuit of advanced quality and sustainable development.","sort":3,"listsize":10,"created_at":"1641639555","updated_at":"1642557184","background_image":"\/upload\/image\/VykV9XzLCXQQsl3qHcesfVacVswUY58EY3P514xc.jpeg","href":"\/en\/ppwh.html","title":"Brand and Culture","current":false},{"id":62,"name":"History","lan":"en","en_name":"fzlc","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"fzlc","detail_template":"fzlc","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/GUSM7bN7zZGWnqCp3x9c5XM6OVMdFyl9yepZRteu.jpeg","summary":"Histroy","detail_content":"<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2023\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tProduct delivery started in Shanghai Plant\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2022\r\n\t<\/div>\r\n\t<div class=\"yzw yzw1\">\r\n\t\tIPO on the STAR Market (688234)<br \/>\r\nSuccessful development of 8-inch products<br \/>\r\nAwarded as a National Model Enterprise of Intellectual Property\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2021\r\n\t<\/div>\r\n\t<div class=\"yzw yzw1\">\r\n\t\tNamed National Champion Enterprise of Manufacturing Industry\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2020\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tFirst Prize of Shandong Provincial Science and Technology Progress\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2019\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tThe global market share of S.I. SiC substrate was over 15%\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2018\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tNamed the National IP Leading Company\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2017\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tFirst Prize of Jinan Science and Technology Progress\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2015\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tThe new headquarter plant construction completed and operation started\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2014\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tFirst Prize of Shandong Provincial Technology Invention\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lclb\">\r\n\t<div class=\"zcy\">\r\n\t\t2010\r\n\t<\/div>\r\n\t<div class=\"yzw\">\r\n\t\tFounded with the registered capital of 60 million RMB\r\n\t<\/div>\r\n<\/div>","sort":4,"listsize":10,"created_at":"1641639555","updated_at":"1687930337","background_image":"\/upload\/image\/khzxjYJeuVUzwa1HikzksdJaZYgU51SXztF6oeRN.jpeg","href":"\/en\/fzlc.html","title":"History","current":false},{"id":63,"name":"Locations","lan":"en","en_name":"ghbj","path":",51,","p_id":51,"type":"article","flag":"article","status":"open","list_template":"ghbj","detail_template":"ghbj","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/jq0BXpPycWLAz0dbo3GenINmHdPcirUH0zgpXNjL.jpeg","summary":"Layout","detail_content":"","sort":5,"listsize":10,"created_at":"1641639555","updated_at":"1685085022","background_image":"\/upload\/image\/EL5lKr9C82ZPvcmcipLO9N4tZiHrtvrZOvTBHQZQ.jpeg","href":"\/en\/ghbj.html","title":"Locations","current":false}]},{"id":53,"name":"Product","lan":"en","en_name":"product","path":"","p_id":0,"type":"article","flag":"product","status":"open","list_template":"product","detail_template":"product","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/C1VVdLX2bcKhUPhNpuekTAjxSKOrkD1PFLWaXXA6.jpeg","summary":"Product","detail_content":"","sort":1,"listsize":10,"created_at":"1641639555","updated_at":"1668582662","background_image":"","href":"\/en\/product.html","title":"Product","child":[{"id":68,"name":"4H n-Type","lan":"en","en_name":"product1","path":",53,","p_id":53,"type":"article","flag":"product","status":"open","list_template":"product1","detail_template":"product1","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/bHnDeiPIa5RIsUfRcLtwkDjRf8Cz9tmIJDNoF9Pg.jpeg","summary":"","detail_content":"<div class=\"shbox\">\r\n\t<div class=\"shbox1\">\r\n\t\tSICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.<br \/>\r\nThe 6-inch & 8-inch product is available for supply currently<br \/>\r\n\t<\/div>\r\n\t<div class=\"shbox2\">\r\n\t\t<div class=\"l\">\r\n\t\t\t<img src=\"\/images\/4hpic.jpg\" \/> \r\n\t\t\t<h2>\r\n\t\t\t\t*Please contact our sales for more detailed information.\r\n\t\t\t<\/h2>\r\n<a href=\"contact.html\" class=\"cpxkan\">>Contact us<\/a> \r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<h3 class=\"bt\">\r\n\t\t\t\tSpecifications\r\n\t\t\t<\/h3>\r\n\t\t\t<div class=\"rn\">\r\n\t\t\t\tn-type\r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"rn1\">\r\n\t\t\t\t<ul>\r\n\t\t\t\t\t<li>\r\n\t\t\t\t\t\t<span class=\"l1\">Polytype<\/span> <span class=\"r1\">4H<\/span> \r\n\t\t\t\t\t<\/li>\r\n\t\t\t\t\t<li>\r\n\t\t\t\t\t\t<span class=\"l1\">Diameter\uff08mm\uff09<\/span> <span class=\"r1\">150\/200<\/span> \r\n\t\t\t\t\t<\/li>\r\n\t\t\t\t\t<li>\r\n\t\t\t\t\t\t<span class=\"l1\">Orientation\uff08\u00b0\uff09<\/span> <span class=\"r1\">4<\/span> \r\n\t\t\t\t\t<\/li>\r\n\t\t\t\t\t<li>\r\n\t\t\t\t\t\t<span class=\"l1\">Thickness\uff08\u03bcm\uff09<\/span> <span class=\"r1\">350\/500<\/span> \r\n\t\t\t\t\t<\/li>\r\n\t\t\t\t\t<li>\r\n\t\t\t\t\t\t<span class=\"l1\">Surface Finish<\/span> <span class=\"r1\">Epi-ready<\/span> \r\n\t\t\t\t\t<\/li>\r\n\t\t\t\t<\/ul>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t<\/div>\r\n<\/div>","sort":0,"listsize":10,"created_at":"1641639555","updated_at":"1706764751","background_image":"","href":"\/en\/product1.html","title":"4H n-Type","current":false},{"id":69,"name":"4H Semi-Insulating-Type","lan":"en","en_name":"product2","path":",53,","p_id":53,"type":"article","flag":"product","status":"open","list_template":"product2","detail_template":"product2","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/C1rp2OmOuxjnXLH4RexRvhhTI7rcC8eCx3IdY0C5.jpeg","summary":"","detail_content":"<div class=\"shbox1\">\r\n\tSICC is constantly pursuing higher crystal quality and processing quality to meet customer needs.<br \/>\r\nThe 4 & 6 inch products are available for supply currently<br \/>\r\nThe 8-inch product is under development<br \/>\r\n<\/div>\r\n<div class=\"shbox2\">\r\n\t<div class=\"l\">\r\n\t\t<img src=\"\/images\/4hpicl.jpg\" \/> \r\n\t\t<h2>\r\n\t\t\t*Please contact our sales for more detailed information.\r\n\t\t<\/h2>\r\n<a href=\"contact.html\" class=\"cpxkan\">>Contact us<\/a> \r\n\t<\/div>\r\n\t<div class=\"r\">\r\n\t\t<h3 class=\"bt\">\r\n\t\t\tSpecifications\r\n\t\t<\/h3>\r\n\t\t<div class=\"rn\">\r\n\t\t\tSemi-insulating type\r\n\t\t<\/div>\r\n\t\t<div class=\"rn1\">\r\n\t\t\t<ul>\r\n\t\t\t\t<li>\r\n\t\t\t\t\t<span class=\"l1\">Polytype<\/span> <span class=\"r1\">4H<\/span> \r\n\t\t\t\t<\/li>\r\n\t\t\t\t<li>\r\n\t\t\t\t\t<span class=\"l1\">Diameter\uff08mm\uff09<\/span> <span class=\"r1\">100 & 150<\/span> \r\n\t\t\t\t<\/li>\r\n\t\t\t\t<li>\r\n\t\t\t\t\t<span class=\"l1\">Orientation\uff08\u00b0\uff09<\/span> <span class=\"r1\">0<\/span> \r\n\t\t\t\t<\/li>\r\n\t\t\t\t<li>\r\n\t\t\t\t\t<span class=\"l1\">Thickness\uff08\u03bcm\uff09<\/span> <span class=\"r1\">500<\/span> \r\n\t\t\t\t<\/li>\r\n\t\t\t\t<li>\r\n\t\t\t\t\t<span class=\"l1\">Surface Finish<\/span> <span class=\"r1\">Epi-ready<\/span> \r\n\t\t\t\t<\/li>\r\n\t\t\t<\/ul>\r\n\t\t<\/div>\r\n\t<\/div>\r\n<\/div>","sort":1,"listsize":10,"created_at":"1641639555","updated_at":"1678929316","background_image":"","href":"\/en\/product2.html","title":"4H Semi-Insulating-Type","current":false},{"id":85,"name":"Knowledge Center","lan":"en","en_name":"Knowledgeen","path":",53,","p_id":53,"type":"article","flag":"product","status":"open","list_template":"knowledge","detail_template":"knowledge","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/YT5tQiDnKFejlxf02EEjIuRQteRHvWlccI5i6fin.jpeg","summary":"","detail_content":"","sort":2,"listsize":12,"created_at":"1668582596","updated_at":"1668585747","background_image":"","href":"\/en\/Knowledgeen.html","title":"Knowledge Center","child":[{"id":70,"name":"About SiC Wafer","lan":"en","en_name":"product3","path":",53,85,","p_id":85,"type":"article","flag":"product","status":"open","list_template":"product3","detail_template":"product3","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/ags6w3vVojkzL690r3ShkW5A3CQ1rxRN9JCJ03Te.jpeg","summary":"","detail_content":"<div class=\"djbox\">\r\n\t<div class=\"djjbox\">\r\n\t\t<h2>\r\n\t\t\tWhat is Silicon Carbide\r\n\t\t<\/h2>\r\n\t\t<div class=\"rwz\">\r\n\t\t\tCompared with traditional materials, silicon carbide has excellent physical properties,<br \/>\r\nwhich can reduce weight and improve efficiency for discrete devices, modules and even systems\r\n\t\t<\/div>\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"djjbox\">\r\n\t<h2>\r\n\t\tSiC\r\n\t<\/h2>\r\n\t<div class=\"rwz\">\r\n\t\t<div class=\"rwzz visible-lg\">\r\n\t\t\tSi\uff08silicon\uff09+C\uff08carbon\uff09=SiC\r\n\t\t<\/div>\r\nSilicon carbide is a group IV - IV compound semiconductor material formed by C and Si elements in the ratio of 1:1, <br \/>\r\nand its hardness is second only to diamond.<br \/>\r\nThis semiconductor material has great development potential, but is hard and brittle.<br \/>\r\nThe preparation process is complex and the processing is difficult.\r\n\t<\/div>\r\n\t<div class=\"djjbox2\">\r\n\t\t<img src=\"\/images\/djpic.jpg\" \/> \r\n\t<\/div>\r\n<\/div>\r\n<div class=\"djbox\">\r\n\t<div class=\"djjbox\">\r\n\t\t<h2>\r\n\t\t\tSiC Features\r\n\t\t<\/h2>\r\n\t\t<div class=\"rwz\">\r\n\t\t\t<div class=\"rwzz visible-lg\">\r\n\t\t\t\tExcellent physical properties\r\n\t\t\t<\/div>\r\nWide bandgap (High temperature resistance)<sup>1<\/sup><br \/>\r\nHigh critical breakdown field(High voltage resistance<sup>2<\/sup><br \/>\r\nHigh thermal conductivity(Heat dissipation)<sup>3<\/sup><br \/>\r\nSaturated electron drift velocity(High switching speed)<sup>4<\/sup> \r\n\t\t<\/div>\r\n\t\t<table>\r\n\t\t\t<tbody>\r\n\t\t\t\t<tr>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t4H-SiC\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tSi\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tGaAs\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tGaN\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t<\/tr>\r\n\t\t\t\t<tr>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tWide bandgap\uff08eV\uff09<sup>1<\/sup> \r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t3.26\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t1.12\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t1.42\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t3.42\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t<\/tr>\r\n\t\t\t\t<tr>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tHigh critical breakdown field\uff08MV\/cm\uff09<sup>2<\/sup> \r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t2.8\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t0.3\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t0.4\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t3\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t<\/tr>\r\n\t\t\t\t<tr>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tHigh thermal conductivity\uff08W\/cmK\uff09<sup>3<\/sup> \r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t4.9\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t1.5\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t0.46\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t1.3\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t<\/tr>\r\n\t\t\t\t<tr>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\tSaturated electron drift velocity\uff081E7 cm\/s\uff09<sup>4<\/sup> \r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t2.7\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t1\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t2\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t\t<td>\r\n\t\t\t\t\t\t2.7\r\n\t\t\t\t\t<\/td>\r\n\t\t\t\t<\/tr>\r\n\t\t\t<\/tbody>\r\n\t\t<\/table>\r\n\t\t<div>\r\n\t\t\t1.A wider bandgap can ensure that electrons are not easy to transit and intrinsic excitation is weak at high temperature. Thus, it can withstand higher operating temperature. <br \/>\r\nThe bandgap width of silicon carbide is three times that of silicon, and its theoretical working temperature can reach more than 400 \u2103.<br \/>\r\n<br \/>\r\n2.Critical breakdown field strength refers to the electric field strength in electric breakdown. Once this value is exceeded, the material will lose its insulation performance. <br \/>\r\nIt determines the voltage resistance of a material. <br \/>\r\nThe critical field strength of silicon carbide is about 10 times that of Si, which can withstand higher voltage and is more suitable for high voltage devices. <br \/>\r\n<br \/>\r\n3.Heat is one of the main reasons affecting the lifetime of devices. <br \/>\r\nThe thermal conductivity represents the material's ability to conduct heat. <br \/>\r\nThe high thermal conductivity of silicon carbide can effectively conduct heat, reduce the device temperature and maintain its normal operation. <br \/>\r\n<br \/>\r\n4.The saturated electron drift velocity refers to the maximum directional moving speed of electrons in semiconductor materials.<br \/>\r\nIt determines the switching frequency of devices.<br \/>\r\nThe saturated electron drift velocity of silicon carbide is twice that of silicon, which can miniaturize the device and improve efficiency.<br \/>\r\n<br \/>\r\n\t\t<\/div>\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"djjbox\">\r\n\t<h2>\r\n\t\tSiC Applications\r\n\t<\/h2>\r\n\t<h3>\r\n\t\tPower Electronics Devices\r\n\t<\/h3>\r\nSiC power devices have unique advantages such as high voltage, high current, high temperature, high frequency and low loss, which will greatly improve the energy conversion efficiency of existing silicon based power devices and have a significant and far-reaching impact on the field of efficient energy conversion.<br \/>\r\nThe main application fields are electric vehicles, charging piles, photovoltaic new energy, rail transit, smart grid, etc.\r\n\t<div class=\"djjbox3\">\r\n\t\t<img src=\"\/images\/djapp1.jpg\" \/> \r\n\t<\/div>\r\n\t<h3>\r\n\t\tMicrowave Communication\r\n\t<\/h3>\r\nSilicon carbide based gallium nitride RF devices have been successfully applied in many fields, mainly in wireless communication infrastructure.<br \/>\r\nSilicon carbide as substrate gallium nitride RF devices have both good thermal conductivity of silicon carbide and advantages of high-power RF output of gallium nitride in high frequency band, which can provide the power and efficiency required by the next generation of high frequency telecommunication network and become the mainstream choice of 5G base station power amplifier.<br \/>\r\n\t<div class=\"djjbox3\">\r\n\t\t<img src=\"\/images\/djapp2.jpg\" \/> \r\n\t<\/div>\r\n<\/div>","sort":0,"listsize":10,"created_at":"1641639555","updated_at":"1668583345","background_image":"\/upload\/image\/dX1jHki3P3SBIB8jOPikl57PDN2FLILKC4jQwoGV.jpeg","href":"\/en\/product3.html","title":"About SiC Wafer","current":false},{"id":71,"name":"SiC Wafer Manufacturing Process","lan":"en","en_name":"product4","path":",53,85,","p_id":85,"type":"article","flag":"product","status":"open","list_template":"product4","detail_template":"product4","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/VeIpWJxFJXrZDxZhRIEdbw4LqKQGLnUIpAn2s0Bh.jpeg","summary":"","detail_content":"<div class=\"djbox\">\r\n\t<div class=\"djjbox\">\r\n\t\t<h2 class=\"djzzff\">\r\n\t\t\tProduction Process of SiC Single Crystal\r\n\t\t<\/h2>\r\n\t\t<div class=\"article\">\r\n\t\t\tSilicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy.<br \/>\r\n<br \/>\r\nSICC independently own the whole process from SiC powder to crystal growth and wafering.\r\n\t\t<\/div>\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"scbox\">\r\n\t<div class=\"l\">\r\n\t\t<div class=\"lk\">\r\n\t\t\t<span class=\"da\">1.<\/span> <span class=\"xz\"> \r\n\t\t\t<h4>\r\n\t\t\t\tSiC Powder\r\n\t\t\t<\/h4>\r\n\t\t\t<h6>\r\n\t\t\t\tSi+C=SiCPowder\r\n\t\t\t<\/h6>\r\n<\/span> \r\n\t\t<\/div>\r\n\t\t<div class=\"article\">\r\n\t\t\tSi and C are synthesized to SiC polycrystalline particles in the ratio of 1:1<br \/>\r\nSiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality<br \/>\r\nEspecially in the preparation of semi-insulating substrate, the requirement of powder purity is very high<br \/>\r\n(Impurity content\uff1c0.5ppm)\r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"r\">\r\n\t\t<img src=\"\/images\/lcpic.png\" \/> \r\n\t<\/div>\r\n<\/div>\r\n<div class=\"scdot\">\r\n\t<img src=\"\/images\/scdot.png\" \/> \r\n<\/div>\r\n\r\n<div class=\"scbox1\">\r\n\t<div class=\"scbox\">\r\n\t\t<div class=\"l\">\r\n\t\t\t<div class=\"lk\">\r\n\t\t\t\t<span class=\"da\">2.<\/span> <span class=\"xz\"> \r\n\t\t\t\t<h4>\r\n\t\t\t\t\tSeed\r\n\t\t\t\t<\/h4>\r\n\t\t\t\t<h6>\r\n\t\t\t\t<\/h6>\r\n<\/span> \r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"article\">\r\n\t\t\t\tAs the base of crystal growth, it provides the basic lattice structure for crystal growth<br \/>\r\nIt is also the core raw material for crystal quality\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcpic1.png\" \/> \r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"scdot\">\r\n\t\t<img src=\"\/images\/scdot.png\" \/> \r\n\t<\/div>\r\n<\/div>\r\n\r\n<div class=\"scbox\">\r\n\t<div class=\"l\">\r\n\t\t<div class=\"lk\">\r\n\t\t\t<span class=\"da\">3.<\/span> <span class=\"xz\"> \r\n\t\t\t<h4>\r\n\t\t\t\tCrystal Growth\r\n\t\t\t<\/h4>\r\n\t\t\t<h6>\r\n\t\t\t\tPhysical Vapor Transport\uff08PVT\uff09\r\n\t\t\t<\/h6>\r\n<\/span> \r\n\t\t<\/div>\r\n\t\t<div class=\"article\">\r\n\t\t\tThe raw materials are heated, <br \/>\r\nand the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control\r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"r\">\r\n\t\t<img src=\"\/images\/lcpic2.png\" \/> \r\n\t<\/div>\r\n<\/div>\r\n<div class=\"scdot\">\r\n\t<img src=\"\/images\/scdot.png\" \/> \r\n<\/div>\r\n\r\n<div class=\"scbox1\">\r\n\t<div class=\"scbox\">\r\n\t\t<div class=\"l\">\r\n\t\t\t<div class=\"lk\">\r\n\t\t\t\t<span class=\"da\">4.<\/span> <span class=\"xz\"> \r\n\t\t\t\t<h4>\r\n\t\t\t\t\tSlicing\r\n\t\t\t\t<\/h4>\r\n\t\t\t\t<h6>\r\n\t\t\t\t<\/h6>\r\n<\/span> \r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"article\">\r\n\t\t\t\tSiC is a hard and brittle material whose hardness is second only to diamond<br \/>\r\nTherefore, it takes long time for slicing, and is easy to crack.<br \/>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcpic3.png\" \/> \r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"scdot\">\r\n\t\t<img src=\"\/images\/scdot.png\" \/> \r\n\t<\/div>\r\n<\/div>\r\n\r\n<div class=\"scbox\">\r\n\t<div class=\"l\">\r\n\t\t<div class=\"lk\">\r\n\t\t\t<span class=\"da\">5.<\/span> <span class=\"xz\"> \r\n\t\t\t<h4>\r\n\t\t\t\tLapping\u2022Polishing\r\n\t\t\t<\/h4>\r\n\t\t\t<h6>\r\n\t\t\t\tMP\u00b7CMP\r\n\t\t\t<\/h6>\r\n<\/span> \r\n\t\t<\/div>\r\n\t\t<div class=\"article\">\r\n\t\t\tLapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready<br \/>\r\nThe surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices.\r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"r\">\r\n\t\t<img src=\"\/images\/lcpic4.png\" \/> \r\n\t<\/div>\r\n<\/div>\r\n<div class=\"scdot\">\r\n\t<img src=\"\/images\/scdot.png\" \/> \r\n<\/div>\r\n\r\n<div class=\"scbox1\">\r\n\t<div class=\"scbox\">\r\n\t\t<div class=\"l\">\r\n\t\t\t<div class=\"lk\">\r\n\t\t\t\t<span class=\"da\">6.<\/span> <span class=\"xz\"> \r\n\t\t\t\t<h4>\r\n\t\t\t\t\tCleaning \u2022 Inspection\r\n\t\t\t\t<\/h4>\r\n\t\t\t\t<h6>\r\n\t\t\t\t<\/h6>\r\n<\/span> \r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"article\">\r\n\t\t\t\tTo remove residual particles and metal impurities in the wafering processes<br \/>\r\nThe final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality<br \/>\r\nIt helps to trace for the downstream process<br \/>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcpic5.png\" \/> \r\n\t\t<\/div>\r\n\t<\/div>\r\n\t<div class=\"scdot\">\r\n\t\t<img src=\"\/images\/scdot.png\" \/> \r\n\t<\/div>\r\n<\/div>","sort":1,"listsize":10,"created_at":"1641639555","updated_at":"1668583354","background_image":"\/upload\/image\/8l1N7YV6yfjk2DkYq6VwUDq9HaT2cJUOj5HsW5pV.jpeg","href":"\/en\/product4.html","title":"SiC Wafer Manufacturing Process","current":false},{"id":86,"name":"The Principle of Silicon Carbide Crystal Growth","lan":"en","en_name":"product5","path":",53,85,","p_id":85,"type":"article","flag":"product","status":"open","list_template":"product5","detail_template":"product5","cover_template":"","detail_title":"","thumbnail":"","summary":"","detail_content":"<div class=\"scbox1 lcboxtop\">\r\n\t<div class=\"lcbox\">\r\n\t\t<h2 class=\"lcboxh23\">\r\n\t\t\tApproaching SiC | The Principle of Silicon Carbide Crystal Growth\r\n\t\t<\/h2>\r\n\t\t<ul class=\"lck\">\r\n\t\t\t<div class=\"l lcenter\">\r\n\t\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tIn nature, crystals are everywhere, and their distribution and application are very extensive. Salt, sugar, diamond and snowflakes are all crystals that can be seen in daily life; Besides, crystal materials such as semiconductor crystal, laser crystal, scintillation crystal, and super-hard crystal also play an important role in industry, medical treatment, semiconductor, and many scientific research fields.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tDifferent crystals have different structures, properties and preparation methods. But their common feature is that the atoms in the crystal are regularly arranged, and the lattice with a specific structure is then formed through periodic stacking in three-dimensional space. Therefore, the appearance of crystal materials usually presents a regular geometric shape.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t<\/div>\r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"r\">\r\n\t\t\t\t<img src=\"\/images\/lcimgen1.svg\" class=\"img-responsive\" \/> \r\n\t\t\t<\/div>\r\n\t\t<\/ul>\r\n\t\t<ul class=\"lck\">\r\n\t\t\t<div class=\"l lcenter\">\r\n\t\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tSilicon Carbide Single Crystal Substrate Material (hereinafter referred to as SiC Substrate) is also a kind of crystalline materials. It belongs to wide bandgap semiconductor material, and has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for preparing high-power electronic devices and microwave RF devices.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t<\/div>\r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"r\">\r\n\t\t\t\t<img src=\"\/images\/lcimg8.svg\" class=\"img-responsive\" \/> \r\n\t\t\t<\/div>\r\n\t\t<\/ul>\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lcbox\">\r\n\t<h2 class=\"lcboxh23\">\r\n\t\tThe Crystal Structure of SiC\r\n\t<\/h2>\r\n\t<ul class=\"lck\">\r\n\t\t<div class=\"l lcenter\">\r\n\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t<p>\r\n\t\t\t\t\tSiC is a IV-IV compound semiconductor material composed of Carbon and Silicon in a stoichiometric ratio of 1:1, and its hardness is second only to diamond.\r\n\t\t\t\t<\/p>\r\n\t\t\t\t<p>\r\n\t\t\t\t\tBoth Carbon and Silicon atoms have 4 valence electrons, which can form 4 covalent bonds. The basic structural unit of SiC crystal, SiC tetrahedron, arises out of the tetrahedral bonding between Silicon and Carbon atoms. The coordination number of both Silicon and Carbon atoms is 4, i.e. each Carbon atom has 4 Silicon atoms around it and each Silicon atom also has 4 Carbon atoms around it.\r\n\t\t\t\t<\/p>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcimgen2.svg\" class=\"img-responsive\" \/> \r\n\t\t<\/div>\r\n\t<\/ul>\r\n\t<ul class=\"lck\">\r\n\t\t<div class=\"l lcenter\">\r\n\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t<p>\r\n\t\t\t\t\tAs a crystal material, SiC Substrate also has the characteristic of periodic stacking of atomic layers. The Si-C diatomic layers are stacked along [0001] direction.Due to the small difference in bond energy between layers, different connection modes are easily generated between atomic layers, leading to over 200 SiC polytypes. Common polytypes include 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, 15R-SiC, etc. Among them, the stacking sequence in the order of \"ABCB\" is called the 4H polytype. Although different polytypes of SiC have the same chemical composition, their physical properties, especially the bandgap width, carrier mobility and other characteristics are quite different. And the properties of 4H polytype are more suitable for semiconductor applications.\r\n\t\t\t\t<\/p>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcimgen3.svg\" class=\"img-responsive\" \/> \r\n\t\t<\/div>\r\n\t<\/ul>\r\n\t<ul class=\"lck\">\r\n\t\t<div class=\"l lcenter\">\r\n\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t<p>\r\n\t\t\t\t\tThe growth parameters such as temperature and pressure significantly influence the stability of 4H-SiC during growth process. Therefore, in order to obtain the single crystal material with high quality and uniformity, the parameters such as growth temperature, growth pressure and growth rate must be precisely controlled during the preparation.\r\n\t\t\t\t<\/p>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcimgen4.svg\" class=\"img-responsive\" \/> \r\n\t\t<\/div>\r\n\t<\/ul>\r\n<\/div>\r\n<div class=\"scbox1 pvtjl\">\r\n\t<div class=\"lcbox\">\r\n\t\t<h2 class=\"lcboxh23\">\r\n\t\t\tPreparation Method of SiC: Physical Vapor Transport Method (PVT)\r\n\t\t<\/h2>\r\n\t\t<ul>\r\n\t\t\t<div class=\"l lcenter\">\r\n\t\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tAt present, the preparation methods of Silicon Carbide are Physical Vapor Transport Method (PVT)\uff0cHigh Temperature Chemical Vapor Deposition Method (HTCVD), and Liquid Phase Method (LPE). And PVT is a mainstream method that is suitable for industrial mass production.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tDuring PVT growth, SiC seed crystal is placed on the top of crucible while the source material (SiC powder) is placed in the bottom. In an enclosed environment with high temperature and low pressure, SiC powder sublimates, and then transports upward to the space near the seed under the effect of temperature gradient and concentration difference. And it will recrystallize after reaching the supersaturated state. Through this method, the size and polytype of SiC crystal can be controlled.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t\t<p>\r\n\t\t\t\t\t\tHowever, the PVT method requires maintaining appropriate growth conditions throughout the entire growth process, otherwise it will lead to lattice disorder and form undesired defects. Besides, the SiC crystal growth is completed in an enclosed space with limited monitoring methods and many variables, thus the control of the process is difficult.\r\n\t\t\t\t\t<\/p>\r\n\t\t\t\t<\/div>\r\n\t\t\t<\/div>\r\n\t\t\t<div class=\"r\">\r\n\t\t\t\t<img src=\"images\/lcimgen5.svg\" class=\"img-responsive\" \/> \r\n\t\t\t<\/div>\r\n\t\t<\/ul>\r\n\t<\/div>\r\n<\/div>\r\n<div class=\"lcbox\">\r\n\t<h2 class=\"lcboxh23\">\r\n\t\tThe Main Mechanism to Grow Single Crystal: Step Flow Growth\r\n\t<\/h2>\r\n\t<ul class=\"lck\">\r\n\t\t<div class=\"l lcenter\">\r\n\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t<p>\r\n\t\t\t\t\tIn the process of growing SiC crystal by PVT method, step flow growth is considered as the main mechanism to form single crystals. The vaporized Si and C atoms will preferentially bond with the atoms on the crystal surface at steps and kinks, where they will nucleate and grow, so that each step flows forward in parallel. When the width between each step on the growth surface is far greater than the diffusion free path of the adsorbed atoms, a large number of adsorbed atoms may agglomerate, and form the two-dimensional island, which will destroy the step flow growth mode, resulting in the formation of other polytypes instead of 4H. Therefore, the adjustment of process parameters aims to control the step structure on the growth surface, so as to prevent the formation of undesired polytypes, and achieve the goal of obtaining 4H single crystal structure, and finally preparing high-quality crystals.\r\n\t\t\t\t<\/p>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcimgen6.svg\" class=\"img-responsive\" \/> \r\n\t\t<\/div>\r\n\t<\/ul>\r\n\t<ul class=\"lck\">\r\n\t\t<div class=\"l lcenter\">\r\n\t\t\t<div class=\"lcboxnr\">\r\n\t\t\t\t<p>\r\n\t\t\t\t\tThe growth of the crystal is just the first step to prepare high quality SiC Substrate. Before being used, 4H-SiC ingot needs to go through a series of processes such as slicing, lapping, beveling, polishing, cleaning and inspecting. As a hard but brittle material, SiC single crystal also has high technical requirements for the wafering steps. Any damage generated in each process may have certain heredity, transfers to the next process and finally affect the product quality. Therefore, the efficient wafering technology for SiC Substrate also attracts the attention of the industry.\r\n\t\t\t\t<\/p>\r\n\t\t\t<\/div>\r\n\t\t<\/div>\r\n\t\t<div class=\"r\">\r\n\t\t\t<img src=\"\/images\/lcimgen7.svg\" class=\"img-responsive\" \/> \r\n\t\t<\/div>\r\n\t<\/ul>\r\n<\/div>","sort":2,"listsize":10,"created_at":"1668583079","updated_at":"1668585437","background_image":"\/upload\/image\/HvIHjoJ4T1CuesLS4jjpbmEFIACtSDScF2HcpUbh.jpeg","href":"\/en\/product5.html","title":"The Principle of Silicon Carbide Crystal Growth","current":false}],"current":false}],"current":false},{"id":52,"name":"News","lan":"en","en_name":"listnews","path":"","p_id":0,"type":"article","flag":"article","status":"open","list_template":"listnew","detail_template":"news","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/o2evsj5viVXEcK4xdlGF54GUMpUotdK9Q1GRBdYQ.jpeg","summary":"News Releases","detail_content":"","sort":2,"listsize":9,"created_at":"1641639555","updated_at":"1668582662","background_image":"","href":"\/en\/listnews.html","title":"News","current":false},{"id":54,"name":"Investors","lan":"en","en_name":"stockinfo","path":"","p_id":0,"type":"article","flag":"article","status":"open","list_template":"tzzgx","detail_template":"tzzgx","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/vscEFzuQnUf7uVv7xdRQVkYipoZ1Y8ccDlmcu2Fb.jpeg","summary":"Invetors","detail_content":"","sort":3,"listsize":10,"created_at":"1641639555","updated_at":"1676521790","background_image":"","href":"\/en\/stockinfo.html","title":"Investors","child":[{"id":72,"name":"Corporate Governance","lan":"en","en_name":"cwxx","path":",54,","p_id":54,"type":"article","flag":"article","status":"open","list_template":"control","detail_template":"cwxx","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/xzpsBJuV9mlW1STPwudzpgByebp47qeelW41lmWl.jpeg","summary":"Financial Information","detail_content":"<div class=\"control-box\">\r\n\t<div class=\"control-title\">\r\n\t\tDirectors, Supervisors and Senior Management\r\n\t<\/div>\r\n\t<div class=\"control-en\">\r\n\t<\/div>\r\n\t<div class=\"control-list\">\r\n\t\t<div class=\"name\">\r\n\t\t\t\u8463\u4e8b\r\n\t\t<\/div>\r\n\t\t<ul>\r\n\t\t\t<li>\r\n\t\t\t\t<h2>\r\n\t\t\t\t\t\u5b97\u8273\u6c11\u5148\u751f\r\n\t\t\t\t<\/h2>\r\n\t\t\t\t<div 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\/>\r\n\u65b9\u5148\u751f\u5728\u65e0\u7ebf\u4ea7\u54c1\u5de5\u7a0b\u53ca\u4f01\u4e1a\u7ba1\u7406\u9886\u57df\u62e5\u6709\u903e25\u5e74\u7ecf\u9a8c\u3002\u81ea1999\u5e742\u6708\u8d77\uff0c\u5f7c\u4efb\u804c\u4e8e\u4e00\u5bb6\u4ece\u4e8bICT\uff08\u4fe1\u606f\u4e0e\u901a\u4fe1\uff09\u57fa\u7840\u8bbe\u65bd\u548c\u667a\u80fd\u7ec8\u7aef\u63d0\u4f9b\u5546\u4e1a\u52a1\u7684\u5168\u7403\u6027\u4f01\u4e1a\uff0c\u73b0\u4efb\u7b2c\u4e94\u8f68\u9053\u5916\u6d3e\u8463\u4e8b\u3002\u81ea2023\u5e7412\u6708\u8d77\uff0c\u5f7c\u4ea6\u62c5\u4efb\u82cf\u5dde\u4e1c\u5fae\u534a\u5bfc\u4f53\u80a1\u4efd\u6709\u9650\u516c\u53f8\uff08\u4e00\u5bb6\u4e8e\u4e0a\u6d77\u8bc1\u5238\u4ea4\u6613\u6240\u4e0a\u5e02\u7684\u516c\u53f8\uff08\u80a1\u7968\u4ee3\u7801\uff1a688261\uff09\uff09\u8463\u4e8b\u3002\r\n\t\t\t\t<\/div>\r\n\t\t\t<\/li>\r\n\t\t\t<li>\r\n\t\t\t\t<h2>\r\n\t\t\t\t\t\u674e\u6d2a\u8f89\u5148\u751f\r\n\t\t\t\t<\/h2>\r\n\t\t\t\t<div class=\"article\">\r\n\t\t\t\t\t\u674e\u6d2a\u8f89\u5148\u751f\uff0c61\u5c81\uff0c\u535a\u58eb\u5b66\u5386\uff0c\u4e8e2024\u5e742\u670829\u65e5\u83b7\u59d4\u4efb\u4e3a\u72ec\u7acb\u8463\u4e8b\uff0c\u5e76\u4e8e2025\u5e742\u670819\u65e5\u83b7\u8c03\u6574\u8463\u4e8b\u89d2\u8272\u4e3a\u72ec\u7acb\u975e\u6267\u884c\u8463\u4e8b\u3002<br \/>\r\n\u674e\u5148\u751f\u5728\u8d22\u52a1\u7ba1\u7406\u9886\u57df\u62e5\u6709\u4e30\u5bcc\u7684\u7ecf\u9a8c\u3002\u5f7c\u4efb\u804c\u4e8e\u4e2d\u534e\u4eba\u6c11\u5171\u548c\u56fd\u8d22\u653f\u90e8\u81f32014\u5e748\u6708\uff0c\u6700\u540e\u804c\u4f4d\u4e3a\u6295\u8d44\u8bc4\u5ba1\u4e2d\u5fc3\u526f\u4e3b\u4efb\u3002\u5f7c\u4ea6\u4e8e2014\u5e748\u6708\u81f32018\u5e747\u6708\u671f\u95f4\u62c5\u4efb\u4e2d\u56fd\u4fe1\u8fbe\u8d44\u4ea7\u7ba1\u7406\u80a1\u4efd\u6709\u9650\u516c\u53f8\uff08\u4e00\u5bb6\u4e8e\u9999\u6e2f\u8054\u4ea4\u6240\u4e0a\u5e02\u7684\u516c\u53f8\uff08\u80a1\u4efd\u4ee3\u53f7\uff1a1359\uff09\uff09\u8463\u4e8b\u3002\u674e\u5148\u751f\u4e8e2018\u5e74\u62c5\u4efb\u4e2d\u534e\u4eba\u6c11\u5171\u548c\u56fd\u8d22\u653f\u90e8\u9884\u7b97\u8bc4\u5ba1\u4e2d\u5fc3\u526f\u4e3b\u4efb\u3002\u5f7c\u4ea6\u62c5\u4efb\u4e2d\u6d77\u5916\u79d1\u6280\u5f00\u53d1\u6709\u9650\u516c\u53f8\u8463\u4e8b\u957f\u81f32019\u5e7411\u6708\u3002\u81ea2022\u5e746\u6708\u8d77\u81f32024\u5e741\u6708\u671f\u95f4\uff0c\u5f7c\u62c5\u4efb\u5317\u4eac\u4e2d\u8d22\u5b9d\u4fe1\u7ba1\u7406\u54a8\u8be2\u6709\u9650\u516c\u53f8\u6267\u884c\u8463\u4e8b\u3002\u674e\u5148\u751f\u81ea2023\u5e746\u6708\u8d77\uff0c\u62c5\u4efb\u4e2d\u6da6\u8f89\u94ed\uff08\u6d77\u5357\uff09\u6295\u8d44\u6709\u9650\u516c\u53f8\u6267\u884c\u8463\u4e8b\u3001\u603b\u7ecf\u7406\u517c\u8d22\u52a1\u603b\u76d1\uff1b\u81ea2023\u5e7410\u6708\u8d77\uff0c\r\n 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\/>\r\nAddress\uff1aNo.99 South Tianyue Road, Huaiyin District, Jinan, Shandong.<br \/>","sort":5,"listsize":10,"created_at":"1641639555","updated_at":"1668582662","background_image":"","href":"\/en\/contact.html","title":"Contact us","child":[{"id":65,"name":"Consulation","lan":"en","en_name":"cpzx","path":",56,","p_id":56,"type":"article","flag":"article","status":"open","list_template":"cpzx","detail_template":"cpzx","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/bZkz4zpbFnLNjTTxwlvL9xX0M3dgCmi7j0H25axJ.jpeg","summary":"Product consultation","detail_content":"<h2>\r\n\tProduct consultation\r\n<\/h2>\r\nContact: Sales Department<br \/>\r\nTel: 0531-85978212<br \/>\r\nFax: 0531-85978212<br \/>\r\nEmail: sales@kunqisiwang.com<br \/>\r\nAddress: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province<br \/>\r\n<br \/>\r\n<h2>\r\n\tInvestor Relations\r\n<\/h2>\r\nContact: Office of the Board of Directors<br \/>\r\nTel: 0531-69900616<br \/>\r\nFax: 0531-85978212<br \/>\r\nEmail: dmo@kunqisiwang.com<br \/>\r\nAddress: No. 99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province<br \/>\r\n<br \/>","sort":0,"listsize":1,"created_at":"1641639555","updated_at":"1678929203","background_image":"","href":"\/en\/cpzx.html","title":"Consulation","current":false},{"id":64,"name":"Investors","lan":"en","en_name":"tzzgx1","path":",56,","p_id":56,"type":"article","flag":"article","status":"open","list_template":"contact","detail_template":"contact","cover_template":"","detail_title":"","thumbnail":"","summary":"Invetors","detail_content":"<h2>\r\n\tProduct Consultation\r\n<\/h2>\r\n<p>\r\n\tYou can contact us through the following ways, or put forward your requirements online\r\n<\/p>\r\n<p>\r\n\tContact\uff1aSales Department\r\n<\/p>\r\nTel\uff1a0531-85978212<br \/>\r\nFax\uff1a0531-85978212<br \/>\r\nE-mail\uff1asales@kunqisiwang.com<br \/>\r\nAddress\uff1aNo.99 South Tianyue Road, Huaiyin District, Jinan, Shandong.<br \/>\r\n<a href=\"\/en\/cpzx.html\"><span style=\"color:#00adbb;\">Online input<\/span><\/a> <br \/>\r\n<br \/>\r\n<h2>\r\n\tInvestors\r\n<\/h2>\r\nContact\uff1aBoard of Directors Office<br \/>\r\nTel\uff1a0531-69900616<br \/>\r\nFax\uff1a0531-85978212<br \/>\r\nE-mail\uff1admo@kunqisiwang.com<br \/>\r\nAddress\uff1aNo.99 South Tianyue Road, Huaiyin District, Jinan, Shandong.<br \/>","sort":1,"listsize":1,"created_at":"1641639555","updated_at":"1678929164","background_image":"","href":"\/en\/tzzgx1.html","title":"Investors","current":false}],"current":false},{"id":57,"name":"Recruiting","lan":"en","en_name":"zxns","path":"","p_id":0,"type":"article","flag":"article","status":"open","list_template":"job","detail_template":"job","cover_template":"","detail_title":"","thumbnail":"\/upload\/image\/VuvvYnGyv0O2KhAdUvNAWBlqUeWP6QB6QQBN2JjN.jpeg","summary":"Recruiting","detail_content":"","sort":6,"listsize":2,"created_at":"1641639555","updated_at":"1668582662","background_image":"","href":"\/en\/zxns.html","title":"Recruiting","child":[{"id":66,"name":"Graduate 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Resources","created_at":"1593419312","updated_at":"1593482817"},"copyright":"\u00a9 2015-2025 Nearyz Resources All Rights Reserved. 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class=\"article\">\r\n\t\t\t\t\t\u90b1\u5b87\u5cf0\u5148\u751f\uff0c65\u5c81\uff0c\u7855\u58eb\u5b66\u5386\uff0c\u4e8e2024\u5e742\u670829\u65e5\u83b7\u59d4\u4efb\u4e3a\u8463\u4e8b\uff0c\u5e76\u4e8e2025\u5e742\u670819\u65e5\u83b7\u8c03\u6574\u8463\u4e8b\u89d2\u8272\u4e3a\u975e\u6267\u884c\u8463\u4e8b\u3002\u90b1\u5148\u751f\u4e8e2020\u5e7411\u6708\u81f32021\u5e741\u6708\u671f\u95f4\u62c5\u4efb\u672c\u516c\u53f8\u72ec\u7acb\u8463\u4e8b\u3002<br 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class=\"article\">\r\n\t\t\t\t\t\u674e\u5a49\u8d8a\u5973\u58eb\uff0c54\u5c81\uff0c\u7855\u58eb\u5b66\u5386\uff0c\u4e8e2025\u5e742\u670819\u65e5\u83b7\u59d4\u4efb\u4e3a\u8463\u4e8b\uff0c\u5e76\u4e8e\u540c\u65e5\u83b7\u8c03\u6574\u8463\u4e8b\u89d2\u8272\u4e3a\u975e\u6267\u884c\u8463\u4e8b\u3002<br \/>\r\n\u674e\u5973\u58eb\u5728\u4f1a\u8ba1\u53ca\u878d\u8d44\u9886\u57df\u62e5\u670930\u5e74\u7ecf\u9a8c\u3002\u5f7c\u4e8e1994\u5e747\u6708\u81f31999\u5e747\u6708\u671f\u95f4\u4efb\u804c\u4e8e\u5317\u4eac\u65b0\u578b\u5efa\u7b51\u6750\u6599\u603b\u5382\uff0c\u79bb\u804c\u524d\u4e3a\u52a9\u7406\u4f1a\u8ba1\u5e08\u3002\r\n 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\/>\r\n\u65b9\u5148\u751f\u5728\u65e0\u7ebf\u4ea7\u54c1\u5de5\u7a0b\u53ca\u4f01\u4e1a\u7ba1\u7406\u9886\u57df\u62e5\u6709\u903e25\u5e74\u7ecf\u9a8c\u3002\u81ea1999\u5e742\u6708\u8d77\uff0c\u5f7c\u4efb\u804c\u4e8e\u4e00\u5bb6\u4ece\u4e8bICT\uff08\u4fe1\u606f\u4e0e\u901a\u4fe1\uff09\u57fa\u7840\u8bbe\u65bd\u548c\u667a\u80fd\u7ec8\u7aef\u63d0\u4f9b\u5546\u4e1a\u52a1\u7684\u5168\u7403\u6027\u4f01\u4e1a\uff0c\u73b0\u4efb\u7b2c\u4e94\u8f68\u9053\u5916\u6d3e\u8463\u4e8b\u3002\u81ea2023\u5e7412\u6708\u8d77\uff0c\u5f7c\u4ea6\u62c5\u4efb\u82cf\u5dde\u4e1c\u5fae\u534a\u5bfc\u4f53\u80a1\u4efd\u6709\u9650\u516c\u53f8\uff08\u4e00\u5bb6\u4e8e\u4e0a\u6d77\u8bc1\u5238\u4ea4\u6613\u6240\u4e0a\u5e02\u7684\u516c\u53f8\uff08\u80a1\u7968\u4ee3\u7801\uff1a688261\uff09\uff09\u8463\u4e8b\u3002\r\n\t\t\t\t<\/div>\r\n\t\t\t<\/li>\r\n\t\t\t<li>\r\n\t\t\t\t<h2>\r\n\t\t\t\t\t\u674e\u6d2a\u8f89\u5148\u751f\r\n\t\t\t\t<\/h2>\r\n\t\t\t\t<div class=\"article\">\r\n\t\t\t\t\t\u674e\u6d2a\u8f89\u5148\u751f\uff0c61\u5c81\uff0c\u535a\u58eb\u5b66\u5386\uff0c\u4e8e2024\u5e742\u670829\u65e5\u83b7\u59d4\u4efb\u4e3a\u72ec\u7acb\u8463\u4e8b\uff0c\u5e76\u4e8e2025\u5e742\u670819\u65e5\u83b7\u8c03\u6574\u8463\u4e8b\u89d2\u8272\u4e3a\u72ec\u7acb\u975e\u6267\u884c\u8463\u4e8b\u3002<br \/>\r\n\u674e\u5148\u751f\u5728\u8d22\u52a1\u7ba1\u7406\u9886\u57df\u62e5\u6709\u4e30\u5bcc\u7684\u7ecf\u9a8c\u3002\u5f7c\u4efb\u804c\u4e8e\u4e2d\u534e\u4eba\u6c11\u5171\u548c\u56fd\u8d22\u653f\u90e8\u81f32014\u5e748\u6708\uff0c\u6700\u540e\u804c\u4f4d\u4e3a\u6295\u8d44\u8bc4\u5ba1\u4e2d\u5fc3\u526f\u4e3b\u4efb\u3002\u5f7c\u4ea6\u4e8e2014\u5e748\u6708\u81f32018\u5e747\u6708\u671f\u95f4\u62c5\u4efb\u4e2d\u56fd\u4fe1\u8fbe\u8d44\u4ea7\u7ba1\u7406\u80a1\u4efd\u6709\u9650\u516c\u53f8\uff08\u4e00\u5bb6\u4e8e\u9999\u6e2f\u8054\u4ea4\u6240\u4e0a\u5e02\u7684\u516c\u53f8\uff08\u80a1\u4efd\u4ee3\u53f7\uff1a1359\uff09\uff09\u8463\u4e8b\u3002\u674e\u5148\u751f\u4e8e2018\u5e74\u62c5\u4efb\u4e2d\u534e\u4eba\u6c11\u5171\u548c\u56fd\u8d22\u653f\u90e8\u9884\u7b97\u8bc4\u5ba1\u4e2d\u5fc3\u526f\u4e3b\u4efb\u3002\u5f7c\u4ea6\u62c5\u4efb\u4e2d\u6d77\u5916\u79d1\u6280\u5f00\u53d1\u6709\u9650\u516c\u53f8\u8463\u4e8b\u957f\u81f32019\u5e7411\u6708\u3002\u81ea2022\u5e746\u6708\u8d77\u81f32024\u5e741\u6708\u671f\u95f4\uff0c\u5f7c\u62c5\u4efb\u5317\u4eac\u4e2d\u8d22\u5b9d\u4fe1\u7ba1\u7406\u54a8\u8be2\u6709\u9650\u516c\u53f8\u6267\u884c\u8463\u4e8b\u3002\u674e\u5148\u751f\u81ea2023\u5e746\u6708\u8d77\uff0c\u62c5\u4efb\u4e2d\u6da6\u8f89\u94ed\uff08\u6d77\u5357\uff09\u6295\u8d44\u6709\u9650\u516c\u53f8\u6267\u884c\u8463\u4e8b\u3001\u603b\u7ecf\u7406\u517c\u8d22\u52a1\u603b\u76d1\uff1b\u81ea2023\u5e7410\u6708\u8d77\uff0c\r\n 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class=\"article\">\r\n\t\t\t\t\t\u5218\u534e\u5973\u58eb\uff0c56\u5c81\uff0c\u672c\u79d1\u5b66\u5386\uff0c\u4e8e2024\u5e742\u670829\u65e5\u83b7\u59d4\u4efb\u4e3a\u72ec\u7acb\u8463\u4e8b\uff0c\u5e76\u4e8e2025\u5e742\u670819\u65e5\u83b7\u8c03\u6574\u8463\u4e8b\u89d2\u8272\u4e3a\u72ec\u7acb\u975e\u6267\u884c\u8463\u4e8b\u3002\r\n 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